Lecture: Method Course: Charge doping effects in semiconductors - Details
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Lehrveranstaltung wird online/digital abgehalten.

General information

Course name Lecture: Method Course: Charge doping effects in semiconductors
Semester SS 2021
Current number of participants 6
expected number of participants 8
Home institute Lehrstuhl für Experimentalphysik V
Courses type Lecture in category Teaching
First date Mon., 12.04.2021 09:00 - 10:30
Online/Digitale Veranstaltung Veranstaltung wird online/digital abgehalten.
Hauptunterrichtssprache englisch
ECTS points 8

Course location / Course dates

n.a. Monday: 09:00 - 10:30, weekly


The goal of the method course is to make students familiar with the concept of controlling the type and the concentration of charge carriers in semiconductors, which is widely used approach in electronics and various fields of materials science. For this purpose, the current method course will be dealing with the preparation of various electron-doped and / or hole-doped narrow-gap semiconductors and investigation of the influence of charge doping on transport and magnetic properties.
Students will be involved rigorously in planning Hall effect experiments, determination of the charge carrier type and density, and describe the charge doping effects in semiconductors.