Lecture: Method Course: Charge doping effects in semiconductors - Details

General information

Course name	Lecture: Method Course: Charge doping effects in semiconductors
Semester	SS 2021
Current number of participants	3
expected number of participants	8
Home institute	Lehrstuhl für Experimentalphysik V
Courses type	Lecture in category Teaching
First date	Monday, 12.04.2021 09:00 - 10:30
Veranstaltung findet online statt / hat Remote-Bestandteile	Yes
Hauptunterrichtssprache	englisch
ECTS points	8

Lecturers

• Dr. Lilian Prodan
• Dr. Somnath Ghara

Rooms and times

No room preference

Monday: 09:00 - 10:30, weekly

Fields of study

• Mathematisch-Naturwissenschaftlich-Technische Fakultät > Institut für Physik

Comment/Description

The goal of the method course is to make students familiar with the concept of controlling the type and the concentration of charge carriers in semiconductors, which is widely used approach in electronics and various fields of materials science. For this purpose, the current method course will be dealing with the preparation of various electron-doped and / or hole-doped narrow-gap semiconductors and investigation of the influence of charge doping on transport and magnetic properties.
Students will be involved rigorously in planning Hall effect experiments, determination of the charge carrier type and density, and describe the charge doping effects in semiconductors.