Vorlesung: Method Course: Charge doping effects in semiconductors - Details

Allgemeine Informationen

Veranstaltungsname	Vorlesung: Method Course: Charge doping effects in semiconductors
Veranstaltungsnummer	PHM-0258
Semester	WS 2023/24
Aktuelle Anzahl der Teilnehmenden	9
erwartete Teilnehmendenanzahl	8
Heimat-Einrichtung	Lehrstuhl für Experimentalphysik V
Veranstaltungstyp	Vorlesung in der Kategorie Lehre
Erster Termin	Montag, 16.10.2023 09:00 - 10:30
Veranstaltung findet online statt / hat Remote-Bestandteile	Ja
Hauptunterrichtssprache	englisch

Lehrende

• Dr. Lilian Prodan
• Dr. Somnath Ghara

Räume und Zeiten

Keine Raumangabe

Montag: 09:00 - 10:30, wöchentlich

Studienbereiche

• Mathematisch-Naturwissenschaftlich-Technische Fakultät > Institut für Physik

Modulzuordnungen

• Materials Science Master Program Materials Science, 13. Version (SS 2023 - WS 2023/24) > 2 Methods in Materials Science > PHM-0258 - Method course: Charge doping effects in semiconductors > Method course: Charge doping effects in semiconductors
• Materials Science and Engineering Master Materials Science and Engineering, 3. Version (WS 2023/24) > 6 Methods in Materials Science > PHM-0258 - Method course: Charge doping effects in semiconductors > Method course: Charge doping effects in semiconductors
• Advanced Functional Materials - FAME Master Advanced Functional Materials (FAME), 10. Version (SS 2023 - SS 2024) > 2 Methods in Materials Science > PHM-0258 - Method course: Charge doping effects in semiconductors > Method course: Charge doping effects in semiconductors
• Materials Science Master Program Materials Science (PO 2016), 14. Version (WS 2023/24) > 2 Methods in Materials Science > PHM-0258 - Method course: Charge doping effects in semiconductors > Method course: Charge doping effects in semiconductors
• Austauschstudium - MNTF Austauschstudium MNTF, 3. Version (WS 2023/24) > Mathematisch-Naturwissenschaftlich-Technische Fakultät - Master Level > PHM-0258 - Method course: Charge doping effects in semiconductors > Method course: Charge doping effects in semiconductors
• Materials Science Master Program Materials Science, 13. Version (SS 2023 - WS 2023/24) > 2 Methods in Materials Science > PHM-0258 - Method course: Charge doping effects in semiconductors > Method course: Charge doping effects in semiconductors (Practical Course)
• Materials Science and Engineering Master Materials Science and Engineering, 3. Version (WS 2023/24) > 6 Methods in Materials Science > PHM-0258 - Method course: Charge doping effects in semiconductors > Method course: Charge doping effects in semiconductors (Practical Course)
• Advanced Functional Materials - FAME Master Advanced Functional Materials (FAME), 10. Version (SS 2023 - SS 2024) > 2 Methods in Materials Science > PHM-0258 - Method course: Charge doping effects in semiconductors > Method course: Charge doping effects in semiconductors (Practical Course)
• Materials Science Master Program Materials Science (PO 2016), 14. Version (WS 2023/24) > 2 Methods in Materials Science > PHM-0258 - Method course: Charge doping effects in semiconductors > Method course: Charge doping effects in semiconductors (Practical Course)
• Austauschstudium - MNTF Austauschstudium MNTF, 3. Version (WS 2023/24) > Mathematisch-Naturwissenschaftlich-Technische Fakultät - Master Level > PHM-0258 - Method course: Charge doping effects in semiconductors > Method course: Charge doping effects in semiconductors (Practical Course)

Kommentar/Beschreibung

The goal of the method course is to make students familiar with the concept of controlling the type and the concentration of charge carriers in semiconductors, which is widely used approach in electronics and various fields of materials science. For this purpose, the current method course will be dealing with the preparation of various electron-doped and / or hole-doped narrow-gap semiconductors and investigation of the influence of charge doping on transport and magnetic properties.
Students will be involved rigorously in planning Hall effect experiments, determination of the charge carrier type and density, and describe the charge doping effects in semiconductors.