Vorlesung: Method Course: Charge doping effects in semiconductors - Details

Vorlesung: Method Course: Charge doping effects in semiconductors - Details

Allgemeine Informationen

Veranstaltungsname Vorlesung: Method Course: Charge doping effects in semiconductors
Veranstaltungsnummer PHM-0258
Semester WS 2023/24
Aktuelle Anzahl der Teilnehmenden 7
erwartete Teilnehmendenzahl 8
Heimateinrichtung Lehrstuhl für Experimentalphysik V
Veranstaltungstyp Vorlesung in der Kategorie Lehre
Erster Termin Montag, 16.10.23, 09:00 - 10:30 Uhr
Veranstaltung findet online statt / hat Remote-Bestandteile Ja
Hauptunterrichtssprache englisch

Räume und Zeiten

Ohne Raum

  • Montag, 09:00 - 10:30, Wöchentlich (ab dem 16.10.23)

Modulzuordnungen

Kommentar/Beschreibung

The goal of the method course is to make students familiar with the concept of controlling the type and the concentration of charge carriers in semiconductors, which is widely used approach in electronics and various fields of materials science. For this purpose, the current method course will be dealing with the preparation of various electron-doped and / or hole-doped narrow-gap semiconductors and investigation of the influence of charge doping on transport and magnetic properties.
Students will be involved rigorously in planning Hall effect experiments, determination of the charge carrier type and density, and describe the charge doping effects in semiconductors.