Praktikum: Method Course: Charge doping effects in semiconductors (Practical Course) - Details

Praktikum: Method Course: Charge doping effects in semiconductors (Practical Course) - Details

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Veranstaltungsname Praktikum: Method Course: Charge doping effects in semiconductors (Practical Course)
Semester SS 2021
Aktuelle Anzahl der Teilnehmenden 3
erwartete Teilnehmendenanzahl 8
Heimat-Einrichtung Lehrstuhl für Experimentalphysik V
Veranstaltungstyp Praktikum in der Kategorie Lehre
Veranstaltung findet in Präsenz statt / hat Präsenz-Bestandteile Ja
Hauptunterrichtssprache englisch
ECTS-Punkte 8

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The goal of the method course is to make students familiar with the concept of controlling the type and the concentration of charge carriers in semiconductors, which is widely used approach in electronics and various fields of materials science. For this purpose, the current method course will be dealing with the preparation of various electron-doped and/or hole-doped narrow-gap semiconductors and investigation of the influence of charge doping on transport and magnetic properties.
Students will be involved rigorously in planning Hall effect experiments, determination of the charge carrier type and density, and describe the charge doping effects in semiconductors.