Practical training: Method Course: Charge doping effects in semiconductors (Practical Course) - Details

Practical training: Method Course: Charge doping effects in semiconductors (Practical Course) - Details

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General information

Course name Practical training: Method Course: Charge doping effects in semiconductors (Practical Course)
Semester SS 2021
Current number of participants 3
expected number of participants 8
Home institute Lehrstuhl für Experimentalphysik V
Courses type Practical training in category Teaching
Veranstaltung findet in Präsenz statt / hat Präsenz-Bestandteile Yes
Hauptunterrichtssprache englisch
ECTS points 8

Rooms and times

No room preference

Comment/Description

The goal of the method course is to make students familiar with the concept of controlling the type and the concentration of charge carriers in semiconductors, which is widely used approach in electronics and various fields of materials science. For this purpose, the current method course will be dealing with the preparation of various electron-doped and/or hole-doped narrow-gap semiconductors and investigation of the influence of charge doping on transport and magnetic properties.
Students will be involved rigorously in planning Hall effect experiments, determination of the charge carrier type and density, and describe the charge doping effects in semiconductors.