Practical: Method Course: Charge doping effects in semiconductors (Practical Course) - Details

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Lehrveranstaltung wird in Präsenz abgehalten.

General information

Semester	SS 2021
Current number of participants	5
expected number of participants	8
Home institute	Lehrstuhl für Experimentalphysik V
Courses type	Practical in category Teaching
Online/Digitale Veranstaltung	Veranstaltung wird in Präsenz abgehalten.
Hauptunterrichtssprache	englisch
ECTS points	8

Lecturers

• Dr. Lilian Prodan
• Dr. Somnath Ghara

Course location / Course dates

unspecified

Fields of study

• Mathematisch-Naturwissenschaftlich-Technische Fakultät > Institut für Physik

Module assignments

• Materials Science Master Program Materials Science, 10. > 2 Methods in Materials Science > Method course: Charge doping effects in semiconductors, valid from SS 2021 > Method course: Charge doping effects in semiconductors (Practical Course)
• Materials Science Master Program Materials Science (PO 2016), 10. > 2 Methods in Materials Science > Method course: Charge doping effects in semiconductors, valid from SS 2021 > Method course: Charge doping effects in semiconductors (Practical Course)

Comment/Description

The goal of the method course is to make students familiar with the concept of controlling the type and the concentration of charge carriers in semiconductors, which is widely used approach in electronics and various fields of materials science. For this purpose, the current method course will be dealing with the preparation of various electron-doped and/or hole-doped narrow-gap semiconductors and investigation of the influence of charge doping on transport and magnetic properties.
Students will be involved rigorously in planning Hall effect experiments, determination of the charge carrier type and density, and describe the charge doping effects in semiconductors.